The Department of Electronics and Communication Engineering (ECE), Manipur Technical University (MTU), has secured a prestigious research project funded by the Anusandhan National Research Foundation (ANRF) under the administrative control of the Department of Science and Technology (DST), Ministry of Science and Technology, Government of India.

The research project, titled “Design and Development of a Robust Broadband Photodetector Based on β-Ga₂O₃/MoS₂ Heterostructure for Space Applications,” is being led by Dr. Biraj Shougaijam, Principal Investigator (PI) and Assistant Professor, Department of Electronics and Communication Engineering, Manipur Technical University.

The project has been sanctioned with a total budget of approximately ₹59.51 lakh for a duration of 36 months. It aims to design and develop an advanced broadband photodetector based on the β-Ga₂O₃/MoS₂ heterostructure for space applications and other high-performance optoelectronic systems. The proposed research focuses on developing robust semiconductor devices capable of operating efficiently in demanding environments, thereby contributing to advancements in space technology and next-generation photonic and electronic devices.

This significant achievement highlights the growing research excellence of Manipur Technical University and reflects the institution’s commitment to fostering innovation, promoting high-impact scientific research, and advancing technological development. The successful execution of this project is expected to make valuable contributions to the fields of semiconductor device engineering, optoelectronics, and space technology. Furthermore, it will provide excellent opportunities for research collaboration, capacity building, and skill development for faculty members, research scholars, and students, thereby strengthening the University’s research ecosystem and enhancing its national research profile.

This project aims to improve the power conversion efficiency (PCE) of rigid/flexible Dye Sensitised Solar Cell (DSSC) through novel design of photoanode based on metal nanoparticle (NP) embedded Titanium dioxide (TiO₂) nanowires (NWs) by Glancing Angle Deposition (GLAD) technique. The motivation of this project is to utilize the combining effect of Plasmonic effect of metal NP and vertically oriented TiO2 NWs as a photoanode to improve the overall performance of the solar cell. Again, One- dimensional (1-D) vertically aligned TiO₂ NW possess unique advantage like large surface-to-volume ratio and multiple scattering of light which enhanced the photon absorption. However, the large band gap of TiO₂ nanostructure limits the absorption of photons in visible region, which intern hampers in solar cell application. Recently, researchers have developed metal NPs assisted metal oxide nanostructures using different techniques for environmental and energy applications. However, noble metal NP embedded vertically oriented TiO₂ nanostructure deposited by physical vapour deposition (PVD) as photoanode for DSSC application is not reported till date. Looking into the engineering challenges and prospective of the above analysis, the author has developed a methodology to develop metal NP embedded vertically oriented TiO2 NW on flexible substrate to enhance the PCE of DSSC. The major issue of photoanode in DSSC is the carrier recombination which may be combat by using metal NP embedded anataseTiO₂ NWs. After the careful optical and structural characterization, the dye/sensitizer and electrolyte will be loaded using spin coating technique through best existing technique above the metal NP embedded TiO₂ NWs to realize the DSSC on rigid/flexible substrate. Finally, a controlled GLAD technique will be implemented to control the shape and size of metal NP with different metals and also with different length and diameter of the TiO₂ NWs to optimize the PCE of the flexible DSSC. Therefore, it will be interesting to investigate and developing a novel photoanode based on metal NP embedded TiO₂ NWs for the application of rigid/flexible DSSC using GLAD technique by e-beam evaporation